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TSM180N03CS-RLG

Taiwan Semiconductor Corporation TSM180N03CS RLG

MPNTSM180N03CS RLG
Active

MOSFET N-CHANNEL 30V 9A 8SOP

$1.01Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TSM180N03CS RLG specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C9A (Tc)
Power dissipation2.5W (Tc)
Operating temperature150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
Case8-SOIC (0.154\", 3.90mm Width)
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs18mOhm @ 8A, 10V
Gate charge (Qg) (Max) @ vgs14 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds345 pF @ 25 V