Taiwan Semiconductor Corporation TSM130NB06LCR RLG
MPNTSM130NB06LCR RLG
Active
MOSFET N-CH 60V 10A/51A 8PDFN
$0.91Ref. price · indicative, final on quote
Packaging8-PowerLDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Ta), 51A (Tc) |
| Power dissipation | 3.1W (Ta), 83W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerLDFN |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 13mOhm @ 10A, 10V |
| Gate charge (Qg) (Max) @ vgs | 37 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 2175 pF @ 30 V |