Taiwan Semiconductor Corporation TSM033NB04CR RLG
MPNTSM033NB04CR RLG
Active
MOSFET N-CH 40V 21A/121A 8PDFN
$2.94Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 40 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 21A (Ta), 121A (Tc) |
| Power dissipation | 3.1W (Ta), 107W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 3.3mOhm @ 21A, 10V |
| Gate charge (Qg) (Max) @ vgs | 77 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5022 pF @ 20 V |