Taiwan Semiconductor Corporation TQM050NB06CR RLG
MPNTQM050NB06CR RLG
Active
MOSFET N-CH 60V 16A/104A PDFN56U
$5.85Ref. price · indicative, final on quote
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| FET type | N-Channel |
| Mounting | Surface Mount, Wettable Flank |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 7V, 10V |
| Current - continuous drain (Id) @ 25°C | 16A (Ta), 104A (Tc) |
| Power dissipation | 3.1W (Ta), 136W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | 8-PowerTDFN |
| Vgs(th) (Max) @ id | 3.8V @ 250µA |
| Rds on (Max) @ id, vgs | 5mOhm @ 16A, 10V |
| Gate charge (Qg) (Max) @ vgs | 114 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 6904 pF @ 30 V |