Taiwan Semiconductor Corporation TPMR6J S1G
MPNTPMR6J S1G
Active
DIODE GEN PURP 600V 6A TO277A
$1.5Ref. price · indicative, final on quote
PackagingTO-277, 3-PowerDFN
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.8 V @ 6 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 6A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | TO-277, 3-PowerDFN |
| Capacitance @ vr, | 60pF @ 4V, 1MHz |
| Reverse recovery time | 40 ns |