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Taiwan Semiconductor Corporation SFAF1008G

Taiwan Semiconductor Corporation SFAF1008G

MPNSFAF1008G
Active

DIODE GEN PURP 600V 10A ITO220AC

$2.03Ref. price · indicative, final on quote
PackagingTO-220-2 Full Pack
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

SFAF1008G specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 10 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified10A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-2 Full Pack
Capacitance @ vr,140pF @ 4V, 1MHz
Reverse recovery time35 ns