Taiwan Semiconductor Corporation SF1006G
MPNSF1006G
Active
DIODE GEN PURP 400V 10A TO220AB
$1.26Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 400 V |
| Voltage - forward (Vf) (Max) @ if | 1.3 V @ 10 A |
| Current - reverse leakage @ vr | 10 µA @ 400 V |
| Current - average rectified | 10A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-3 |
| Capacitance @ vr, | 50pF @ 4V, 1MHz |
| Reverse recovery time | 35 ns |