Taiwan Semiconductor Corporation S3JB
MPNS3JB
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DIODE GEN PURP 600V 3A DO214AA
$0.45Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.15 V @ 3 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Case | DO-214AA, SMB |
| Capacitance @ vr, | 18pF @ 0V, 1MHz |
| Reverse recovery time | 1.5 µs |