Taiwan Semiconductor Corporation S1M-KR2G
MPNS1M-KR2G
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Diode type | Standard |
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 1000 V |
| Voltage - forward (Vf) (Max) @ if | 1.1 V @ 1 A |
| Current - reverse leakage @ vr | 1 µA @ 1000 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C~175°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR) |
| Case | DO-214AC, SMA |
| Capacitance @ vr, | 12pF @ 4V, 1MHz |
| Reverse recovery time | 1.5 µs |