Skip to main content
Taiwan Semiconductor Corporation PU3DBH

Taiwan Semiconductor Corporation PU3DBH

MPNPU3DBH
Active

DIODE GEN PURP 200V 3A DO214AA

$0.55Ref. price · indicative, final on quote
PackagingDO-214AA, SMB
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PU3DBH specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if930 mV @ 3 A
Current - reverse leakage @ vr2 µA @ 200 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
CaseDO-214AA, SMB
Capacitance @ vr,47pF @ 4V, 1MHz
Reverse recovery time25 ns