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Taiwan Semiconductor Corporation PU2BMH M3G

Taiwan Semiconductor Corporation PU2BMH M3G

MPNPU2BMH M3G
Active

DIODE GEN PURP 100V 2A MICRO SMA

$0.53Ref. price · indicative, final on quote
Packaging2-SMD, Flat Lead
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

PU2BMH M3G specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if1.05 V @ 2 A
Current - reverse leakage @ vr1 µA @ 100 V
Current - average rectified2A
Operating temperature - junction-55°C ~ 175°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case2-SMD, Flat Lead
Capacitance @ vr,18pF @ 4V, 1MHz
Reverse recovery time36 ns