
Taiwan Semiconductor Corporation MUR860HC0G
MPNMUR860HC0G
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | Automotive, AEC-Q101 |
| Diode type | Standard |
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 8 A |
| Current - reverse leakage @ vr | 5 µA @ 600 V |
| Current - average rectified | 8A |
| Operating temperature - junction | -55°C~175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Case | TO-220-2 |
| Reverse recovery time | 50 ns |