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Taiwan Semiconductor Corporation MUR460HB0G — Discrete Semiconductors

Taiwan Semiconductor Corporation MUR460HB0G

MPNMUR460HB0G
Active
$0.4600Ref. price · indicative, final on quote
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

MUR460HB0G specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.28 V @ 4 A
Current - reverse leakage @ vr10 µA @ 600 V
Current - average rectified4A
Operating temperature - junction-55°C ~ 175°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageBulk
TechnologyStandard
QualificationAEC-Q101
CaseDO-201AD, Axial
Capacitance @ vr,65pF @ 4V, 1MHz
Reverse recovery time50 ns