Taiwan Semiconductor Corporation MBR2045PTH
MPNMBR2045PTH
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Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 45 V |
| Voltage - forward (Vf) (Max) @ if | 840 mV @ 20 A |
| Current - reverse leakage @ vr | 100 µA @ 45 V |
| Current - average rectified (Io) (per diode) | 20A |
| Operating temperature - junction | -55°C ~ 150°C |
| Grade | Automotive |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | Schottky |
| Qualification | AEC-Q101 |
| Case | TO-247-3 |
| Diode configuration | 1 Pair Common Cathode |