HS1F

Taiwan Semiconductor Corporation

DIODE GEN PURP 300V 1A DO214AC

Taiwan Semiconductor Corporation HS1F
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MOQ 10 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

HS1F specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 300 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-214AC, SMA
Capacitance @ vr,20pF @ 4V, 1MHz
Reverse recovery time50 ns
HS1F
[ALLOC] verified
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