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Taiwan Semiconductor Corporation HS1F

Taiwan Semiconductor Corporation HS1F

MPNHS1F
Active

DIODE GEN PURP 300V 1A DO214AC

$0.46Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HS1F specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1 V @ 1 A
Current - reverse leakage @ vr5 µA @ 300 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-214AC, SMA
Capacitance @ vr,20pF @ 4V, 1MHz
Reverse recovery time50 ns