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Taiwan Semiconductor Corporation HERF1008GAH

Taiwan Semiconductor Corporation HERF1008GAH

MPNHERF1008GAH
Active

DIODE GEN PURP 1KV 10A ITO220AB

$1.38Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
SeriesAutomotive, AEC-Q101
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HERF1008GAH specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 5 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified10A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
CaseTO-220-3 Full Pack, Isolated Tab
Capacitance @ vr,40pF @ 4V, 1MHz
Reverse recovery time80 ns