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Taiwan Semiconductor Corporation HERF1007GAH

Taiwan Semiconductor Corporation HERF1007GAH

MPNHERF1007GAH
Active

DIODE GEN PURP 800V 10A ITO220AB

$0.98Ref. price · indicative, final on quote
PackagingTO-220-3 Full Pack, Isolated Tab
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HERF1007GAH specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 5 A
Current - reverse leakage @ vr10 µA @ 800 V
Current - average rectified10A
Operating temperature - junction-55°C ~ 150°C
GradeAutomotive
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTube
TechnologyStandard
QualificationAEC-Q101
CaseTO-220-3 Full Pack, Isolated Tab
Capacitance @ vr,40pF @ 4V, 1MHz
Reverse recovery time80 ns