Taiwan Semiconductor Corporation HERA806G
MPNHERA806G
Active
DIODE GEN PURP 600V 8A TO220AC
$1.02Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 600 V |
| Voltage - forward (Vf) (Max) @ if | 1.7 V @ 8 A |
| Current - reverse leakage @ vr | 10 µA @ 600 V |
| Current - average rectified | 8A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tube |
| Technology | Standard |
| Case | TO-220-2 |
| Capacitance @ vr, | 55pF @ 4V, 1MHz |
| Reverse recovery time | 80 ns |