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Taiwan Semiconductor Corporation HER304G

Taiwan Semiconductor Corporation HER304G

MPNHER304G
Active

DIODE GEN PURP 300V 3A DO201AD

$0.56Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

HER304G specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)300 V
Voltage - forward (Vf) (Max) @ if1 V @ 3 A
Current - reverse leakage @ vr10 µA @ 300 V
Current - average rectified3A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-201AD, Axial
Capacitance @ vr,60pF @ 4V, 1MHz
Reverse recovery time50 ns