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Taiwan Semiconductor Corporation GPAS1005

Taiwan Semiconductor Corporation GPAS1005

MPNGPAS1005
Active

DIODE GEN PURP 600V 10A TO263AB

$0.89Ref. price · indicative, final on quote
PackagingTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GPAS1005 specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 10 A
Current - reverse leakage @ vr5 µA @ 600 V
Current - average rectified10A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Capacitance @ vr,50pF @ 4V, 1MHz