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Taiwan Semiconductor Corporation GPA806

Taiwan Semiconductor Corporation GPA806

MPNGPA806
Active

DIODE GEN PURP 800V 8A TO220AC

$0.83Ref. price · indicative, final on quote
PackagingTO-220-2
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GPA806 specifications
ParameterValue
MountingThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 8 A
Current - reverse leakage @ vr5 µA @ 800 V
Current - average rectified8A
Operating temperature - junction-55°C ~ 150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTube
TechnologyStandard
CaseTO-220-2
Capacitance @ vr,50pF @ 4V, 1MHz