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Taiwan Semiconductor Corporation GBU2507

Taiwan Semiconductor Corporation GBU2507

MPNGBU2507
Active

DIODE BRIDGE 25A 1000V GBU

$2.95Ref. price · indicative, final on quote
Packaging4-ESIP, GBU
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

GBU2507 specifications
ParameterValue
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse1 kV
Voltage - forward (Vf) (Max) @ if1.2 V @ 25 A
Current - reverse leakage @ vr10 µA @ 1000 V
Current - average rectified25 A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
TechnologyStandard
Case4-ESIP, GBU