Taiwan Semiconductor Corporation ESH2BA
MPNESH2BA
Active
DIODE GEN PURP 100V 1A DO214AC
$0.52Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 100 V |
| Voltage - forward (Vf) (Max) @ if | 900 mV @ 1 A |
| Current - reverse leakage @ vr | 1 µA @ 200 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C ~ 175°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | DO-214AC, SMA |
| Capacitance @ vr, | 25pF @ 4V, 1MHz |
| Reverse recovery time | 25 ns |