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Taiwan Semiconductor Corporation ESH1DM RSG

ESH1DM RSG – 200V 1A Fast Recovery Diode Micro SMA

MPNESH1DM RSG
Active

DIODE GEN PURP 200V 1A MICRO SMA

$0.46Ref. price · indicative, final on quote
Packaging2-SMD, Flat Lead
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ESH1DM RSG specifications
ParameterValue
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)200 V
Voltage - forward (Vf) (Max) @ if1.5 V @ 1 A
Current - reverse leakage @ vr1 µA @ 200 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
Case2-SMD, Flat Lead
Capacitance @ vr,3pF @ 4V, 1MHz
Reverse recovery time25 ns