Taiwan Semiconductor Corporation ES3DV
MPNES3DV
Active
DIODE GEN PURP 200V 3A DO214AB
$0.47Ref. price · indicative, final on quote
PackagingDO-214AB, SMC
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Surface Mount |
| Voltage - DC reverse (Vr) | 200 V |
| Current - reverse leakage @ vr | 10 µA @ 200 V |
| Current - average rectified | 3A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | DO-214AB, SMC |
| Capacitance @ vr, | 45pF @ 4V, 1MHz |
| Reverse recovery time | 20 ns |