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Taiwan Semiconductor Corporation ES1GAL

Taiwan Semiconductor Corporation ES1GAL

MPNES1GAL
Active

DIODE GEN PURP 400V 1A THIN SMA

$0.46Ref. price · indicative, final on quote
PackagingDO-221AC, SMA Flat Leads
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

ES1GAL specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1.3 V @ 1 A
Current - reverse leakage @ vr1 µA @ 400 V
Current - average rectified1A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-221AC, SMA Flat Leads
Capacitance @ vr,16pF @ 4V, 1MHz
Reverse recovery time35 ns