ES1B

Taiwan Semiconductor Corporation

DIODE GEN PURP 100V 1A DO214AC

Taiwan Semiconductor Corporation ES1B
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MOQ 5 · Tape & Reel (TR) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

ES1B specifications
Parameter / AttributeSpecification / Value
Diode typeStandard
MountingSurface Mount
Voltage - DC reverse (Vr)100 V
Voltage - forward (Vf) (Max) @ if975 mV @ 1 A
Current - reverse leakage @ vr5 µA @ 100 V
Current - average rectified1A
Operating temperature - junction-50°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-214AC, SMA
Capacitance @ vr,45pF @ 4V, 1MHz
Reverse recovery time50 ns
ES1B
[ALLOC] verified
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