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Taiwan Semiconductor Corporation DBL105G — Discrete Semiconductors

Taiwan Semiconductor Corporation DBL105G

MPNDBL105G
Active

BRIDGE RECT 1PHASE 600V 1A DBL

$0.6Ref. price · indicative, final on quote
Packaging4-DIP (0.300", 7.62mm)
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

DBL105G specifications
ParameterValue
Diode typeSingle Phase
MountingThrough Hole
Voltage - peak reverse600 V
Voltage - forward (Vf) (Max) @ if1.1 V @ 1 A
Current - reverse leakage @ vr2 µA @ 600 V
Current - average rectified1 A
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
TechnologyStandard
Case4-DIP (0.300\", 7.62mm)