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Taiwan Semiconductor Corporation BZT52B4V7-G RHG

Taiwan Semiconductor Corporation BZT52B4V7-G RHG

MPNBZT52B4V7-G RHG
Active

DIODE ZENER 4.7V 410MW SOD123

$0.3Ref. price · indicative, final on quote
PackagingSOD-123
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BZT52B4V7-G RHG specifications
ParameterValue
MountingSurface Mount
Voltage - zener (Nom)4.7 V
Voltage - forward (Vf) (Max) @ if900 mV @ 10 mA
Current - reverse leakage @ vr3 µA @ 2 V
Power - max410 mW
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Tolerance±2%
CaseSOD-123
Impedance (Max)80 Ohms