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Taiwan Semiconductor Corporation BYG23M

Taiwan Semiconductor Corporation BYG23M

MPNBYG23M
Active

DIODE GEN PURP 1.5A DO214AC

$0.37Ref. price · indicative, final on quote
PackagingDO-214AC, SMA
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BYG23M specifications
ParameterValue
MountingSurface Mount
Voltage - DC reverse (Vr)1000 V
Voltage - forward (Vf) (Max) @ if1.7 V @ 1.5 A
Current - reverse leakage @ vr1 µA @ 1000 V
Current - average rectified1.5A
Operating temperature - junction-55°C ~ 150°C
SpeedFast Recovery =< 500ns, > 200mA (Io)
PackageTape & Reel (TR); Cut Tape (CT)
TechnologyStandard
CaseDO-214AC, SMA
Capacitance @ vr,15pF @ 4V, 1MHz
Reverse recovery time65 ns