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Taiwan Semiconductor Corporation BSS123W RFG — Discrete Semiconductors

Taiwan Semiconductor Corporation BSS123W RFG

MPNBSS123W RFG
Active

100V, 0.16A, SINGLE N-CHANNEL PO

$0.4300Ref. price · indicative, final on quote
PackagingSC-70, SOT-323
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

BSS123W RFG specifications
ParameterValue
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C160mA (Ta)
Power dissipation298mW (Ta)
Operating temperature-55°C~150°C(TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSC-70, SOT-323
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs5Ohm @ 160mA, 10V
Gate charge (Qg) (Max) @ vgs2 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds30 pF @ 50 V