Taiwan Semiconductor Corporation 1T6G
MPN1T6G
Active
DIODE GEN PURP 800V 1A TS-1
$0.3Ref. price · indicative, final on quote
PackagingT-18, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Mounting | Through Hole |
| Voltage - DC reverse (Vr) | 800 V |
| Voltage - forward (Vf) (Max) @ if | 1 V @ 1 A |
| Current - reverse leakage @ vr | 5 µA @ 800 V |
| Current - average rectified | 1A |
| Operating temperature - junction | -55°C ~ 150°C |
| Speed | Standard Recovery >500ns, > 200mA (Io) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Technology | Standard |
| Case | T-18, Axial |
| Capacitance @ vr, | 10pF @ 4V, 1MHz |