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Taiwan Semiconductor Corporation 1N5408GH — Discrete Semiconductors

Taiwan Semiconductor Corporation 1N5408GH

MPN1N5408GH
Active

DIODE GEN PURP 3A DO201AD

$0.3800Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5408GH specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingThrough Hole
Voltage - forward (Vf) (Max) @ if1 V @ 3 A
Current - reverse leakage @ vr5 µA @ 1000 V
Current - average rectified3A
Operating temperature - junction-55°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-201AD, Axial
Capacitance @ vr,25pF @ 4V, 1MHz