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Taiwan Semiconductor Corporation 1N5407G — Discrete Semiconductors

Taiwan Semiconductor Corporation 1N5407G

MPN1N5407G
NRND

DIODE GEN PURP 800V 3A AXIAL

$0.4700Ref. price · indicative, final on quote
PackagingDO-201AA, DO-27, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5407G specifications
ParameterValue
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)800 V
Voltage - forward (Vf) (Max) @ if1 V @ 3 A
Current - reverse leakage @ vr5 µA @ 800 V
Current - average rectified3A
Operating temperature - junction-55°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-201AD, Axial
Capacitance @ vr,25pF @ 4V, 1MHz