Skip to main content
Taiwan Semiconductor Corporation 1N5404GH — Discrete Semiconductors

Taiwan Semiconductor Corporation 1N5404GH

MPN1N5404GH
Active

DIODE GEN PURP 400V 3A DO201AD

$0.3600Ref. price · indicative, final on quote
PackagingDO-201AD, Axial
RoHSROHS3 Compliant
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

1N5404GH specifications
ParameterValue
SeriesAutomotive, AEC-Q101
Diode typeStandard
MountingThrough Hole
Voltage - DC reverse (Vr)400 V
Voltage - forward (Vf) (Max) @ if1 V @ 3 A
Current - reverse leakage @ vr5 µA @ 400 V
Current - average rectified3A
Operating temperature - junction-55°C~150°C
SpeedStandard Recovery >500ns, > 200mA (Io)
PackageTape & Reel (TR)
CaseDO-201AD, Axial
Capacitance @ vr,25pF @ 4V, 1MHz