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STMicroelectronics TS27M2IDT — Logic ICs

STMicroelectronics TS27M2IDT CMOS Op-Amp, 1 MHz, 0.6 V/µs

MPNTS27M2IDT
End of Life

STMicroelectronics TS27M2IDT dual CMOS operational amplifier, 1 MHz gain bandwidth, 0.6 V/µs slew rate, 150 µA supply per channel, 3 V to 16 V supply, -40°C to 125°C, 8-SOIC package.

$1.62Ref. price · indicative, final on quote
Packaging8-SOIC (0.154", 3.90mm Width)
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

TS27M2IDT Technical Specifications
ParameterValue
Mounting typeSurface Mount
Amplifier typeCMOS
Voltage - input offset1.1 mV
Voltage - supply span16 V
Current - supply150µA (x2 Channels)
Current - input bias1 pA
Current - output (Channel)45 mA
Operating temperature-40°C ~ 125°C
Gain bandwidth product1 MHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate0.6V/µs
Case8-SOIC (0.154\", 3.90mm Width)
Number of circuits2

Product details

Dual CMOS op-amp for low-power industrial signal chains

Each amplifier draws 150 µA supply current, making it a fit for multi-channel sensor interfaces, battery-monitoring circuits, and 4–20 mA loop transmitters where the total current budget is tight. The 1 MHz gain-bandwidth product and 0.6 V/µs slew rate are enough for low-frequency signal conditioning — thermocouple amplifiers, strain-gauge bridges, and control-loop filters — without wasting power on bandwidth you do not need. The supply range spans 3 V to 16 V, so it runs from a single 3.3 V rail or a 12 V industrial bus without a secondary regulator.

At 0.6 V/µs, the TS27M2IDT delivers a full-power bandwidth of roughly 9.5 kHz at 10 V peak-to-peak output. That is fine for audio-frequency filtering, PWM-conditioning, and slow ADC drive stages. If your design needs to swing 10 V at 20 kHz or above, the TS274IPT with 5.5 V/µs is the faster sibling — but it draws 1 mA per channel, nearly seven times the supply current. The TS27L2IDT drops to 0.04 V/µs and 10 µA per channel, which is the ultra-low-power option for sub-100 Hz sensor nodes. The TS27M2IDT sits in the middle: enough slew for most industrial signal chains without burning the battery.

Frequently asked questions

What is the closest functional equivalent to TS27M2IDT?

The closest parametric sibling is the TS27L2IDT, which shares the same dual-channel CMOS architecture, 8-SOIC package, and supply range, but trades slew rate (0.04 V/µs vs 0.6 V/µs) and gain bandwidth (100 kHz vs 1 MHz) for a much lower supply current of 10 µA per channel. Choose the TS27L2IDT when power is the overriding constraint and signal bandwidth stays below a few hundred hertz.

What package does TS27M2IDT ship in?

The supplier device package is 8-SOIC. Surface-mount only.