TS27M2IDT

STMicroelectronics

STMicroelectronics TS27M2IDT dual CMOS operational amplifier, 1 MHz gain bandwidth, 0.6 V/µs slew rate, 150 µA supply per channel, 3 V to 16 V supply, -40°C to 125°C, 8-SOIC package.

STMicroelectronics TS27M2IDT
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

TS27M2IDT specifications
Parameter / AttributeSpecification / Value
MountingSurface Mount
Amplifier typeCMOS
Voltage - input offset1.1 mV
Voltage - supply span16 V
Current - supply150µA (x2 Channels)
Current - input bias1 pA
Current - output (Channel)45 mA
Operating temperature-40°C ~ 125°C
Gain bandwidth product1 MHz
PackageTape & Reel (TR); Cut Tape (CT)
Slew rate0.6V/µs
Case8-SOIC (0.154\", 3.90mm Width)
Number of circuits2

Technical details

Dual CMOS op-amp for low-power industrial signal chains

Each amplifier draws 150 µA supply current, making it a fit for multi-channel sensor interfaces, battery-monitoring circuits, and 4–20 mA loop transmitters where the total current budget is tight. The 1 MHz gain-bandwidth product and 0.6 V/µs slew rate are enough for low-frequency signal conditioning — thermocouple amplifiers, strain-gauge bridges, and control-loop filters — without wasting power on bandwidth you do not need. The supply range spans 3 V to 16 V, so it runs from a single 3.3 V rail or a 12 V industrial bus without a secondary regulator.

At 0.6 V/µs, the TS27M2IDT delivers a full-power bandwidth of roughly 9.5 kHz at 10 V peak-to-peak output. That is fine for audio-frequency filtering, PWM-conditioning, and slow ADC drive stages. If your design needs to swing 10 V at 20 kHz or above, the TS274IPT with 5.5 V/µs is the faster sibling — but it draws 1 mA per channel, nearly seven times the supply current. The TS27L2IDT drops to 0.04 V/µs and 10 µA per channel, which is the ultra-low-power option for sub-100 Hz sensor nodes. The TS27M2IDT sits in the middle: enough slew for most industrial signal chains without burning the battery.

TS27M2IDT
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