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STMicroelectronics TIP42CN — Discrete Semiconductors

TIP42CN PNP Power Transistor, 100 V, 6 A, TO-220

MPNTIP42CN
Obsolete

TIP42CN, PNP power transistor, 100 V Vceo, 6 A Ic, 65 W, TO-220-3 through-hole package.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TIP42CN specifications
ParameterValue
MountingThrough Hole
FET typePNP
Voltage - collector emitter breakdown100 V
Current - collector (Ic)6 A
Current - collector cutoff700µA
DC current gain (hFE) (Min) @ ic, vce15 @ 3A, 4V
Power - max65 W
Operating temperature150°C(TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic1.5V @ 600mA, 6A

Product details

PNP power transistor for linear and switching applications

The TIP42CN is a PNP bipolar power transistor in a TO-220-3 through-hole package, rated for 100 V collector-emitter breakdown voltage and 6 A continuous collector current, with a maximum power dissipation of 65 W. It is part of the TIP42 family of complementary silicon power transistors. The 'C' suffix indicates the 100 V Vceo rating tier within the family, and the 'N' suffix denotes the lead-free / RoHS-compliant version.

On-state performance and saturation characteristics

The collector-emitter saturation voltage is specified at 1.5 V maximum with 600 mA base current driving 6 A collector current — a figure to check when calculating conduction losses in a linear regulator or output stage at full load. The 700 µA maximum collector cutoff current at zero base drive sets the off-state leakage floor; this matters in high-impedance load circuits where leakage can pull the output off the rail.

The junction temperature rating is 150 °C (TJ).

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