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STMicroelectronics TIP41CN — Discrete Semiconductors

TIP41CN NPN Power Transistor, 100 V, 6 A, TO-220-3

MPNTIP41CN
Obsolete

STMicroelectronics TIP41CN NPN power transistor, 100 V collector-emitter breakdown, 6 A continuous collector current, 65 W power dissipation, TO-220-3 through-hole package, tube.

Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

TIP41CN specifications
ParameterValue
MountingThrough Hole
FET typeNPN
Voltage - collector emitter breakdown100 V
Current - collector (Ic)6 A
Current - collector cutoff700µA
DC current gain (hFE) (Min) @ ic, vce15 @ 3A, 4V
Power - max65 W
Operating temperature150°C(TJ)
PackageTube
CaseTO-220-3
Vce saturation (Max) @ ib, ic1.5V @ 600mA, 6A

Product details

NPN power transistor — 100 V, 6 A, 65 W in TO-220

It comes in a standard TO-220-3 through-hole package, which allows direct mounting to a heatsink via the metal tab for thermal management. This part is part of the TIP41 series and is intended for linear amplifier stages, switching loads up to 6 A, and general power management in through-hole designs.

Saturation voltage and DC gain at full current

At 6 A collector current, the Vce(sat) is specified at 1.5 V maximum with a base drive of 600 mA — this sets the on-state voltage drop you need to budget for in a switching circuit. The minimum DC current gain (hFE) is 15 at 3 A and 4 Vce, which means the base drive must supply at least 400 mA to saturate the transistor at 6 A. The collector cut-off current is 700 µA maximum, a typical figure for a power BJT at rated voltage.

Frequently asked questions

What is the maximum collector current of TIP41CN?

The TIP41CN is rated for a continuous collector current (Ic) of 6 A maximum.