STMicroelectronics TD351ID, IC GATE DRVR HIGH-SIDE 8SO, single-channel high-side driver for IGBT and N-channel MOSFET, 1.3A source / 1.7A sink peak output, 12V–26V supply, 8-SOIC package, -40°C to 150°C junction temperature.
| Parameter | Value |
|---|---|
| Gate type | IGBT, N-Channel MOSFET |
| Input type | Non-Inverting |
| Channel type | Single |
| Mounting | Surface Mount |
| Supply voltage | 12V ~ 26V |
| Logic voltage - VIL, VIH | 0.8V, 4.2V |
| Current - peak output (Source, sink) | 1.3A, 1.7A |
| Operating temperature | -40°C ~ 150°C (TJ) |
| Package | Tube |
| Case | 8-SOIC (0.154\", 3.90mm Width) |
| Number of drivers | 1 |
| Driven configuration | High-Side |
| Rise (Fall time) | 100ns, 100ns (Max) |
The STMicroelectronics TD351ID is a single-channel high-side gate driver for IGBT and N-channel MOSFET switches. It delivers a peak output of 1.3A source and 1.7A sink.
No last-time-buy or end-of-life notices are filed.
Yes. The TD351ID is specified for both IGBT and N-channel MOSFET gates. The high-side configuration works for N-channel devices in bootstrap or charge-pump topologies.