STMicroelectronics · MDmesh™ V Series
STMicroelectronics MDmesh™ V series, N-Channel MOSFET, 650 V Vdss, 35 A Id, 78 mOhm Rds(on) at 10 V, 82 nC Qg, TO-247-3 through-hole package, 150°C junction temperature.
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | MDmesh™ V |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 35A (Tc) |
| Power dissipation | 210W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 78mOhm @ 17.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 82 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3470 pF @ 100 V |
The STWA45N65M5: Total gate charge is 82 nC at 10 V. Input capacitance is 3470 pF at 100 V drain-source.
Housed in a TO-247 through-hole package, the part dissipates up to 210 W at the case. The junction temperature ceiling is 150°C. The TO-247's large tab area allows direct heatsink mounting with a thermal pad or grease — the thermal resistance from junction to case is the limiting factor in continuous power designs.
It is ROHS3 compliant.
