STMicroelectronics MDmesh™ K5 series, N-Channel MOSFET, 800 V Drain to Source Voltage, 7 A Continuous Drain Current @ 25°C, TO-247-3 Through Hole, Tube.
| Parameter | Value |
|---|---|
| Series | MDmesh™ K5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 7A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 3.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 340 pF @ 100 V |
The STW9N80K5: The 900 mOhm maximum on-resistance at 10 V gate drive and 3.5 A drain current is a moderate value for an 800 V MOSFET.
The MDmesh K5 series is a current-generation offering from STMicroelectronics.
The continuous drain current is 7 A at 25°C case temperature. Derate for higher ambient temperatures per the thermal curve in the datasheet.
Yes, the STW9N80K5 is ROHS3 compliant.
Both are 800 V, 7 A N-channel MOSFETs in TO-247-3 packages, so the basic ratings align. However, gate charge, on-resistance, and switching characteristics differ — verify the Rds(on) and Qg against your drive circuit and switching frequency before substituting.