STMicroelectronics MDmesh M5 series, STW88N65M5-4, N-Channel MOSFET, 650 V Vdss, 84 A Id, 29 mOhm Rds(on) at 42 A, 10 V, TO-247-4 package, through-hole mount.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M5 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 84A (Tc) |
| Power dissipation | 450W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 29mOhm @ 42A, 10V |
| Gate charge (Qg) (Max) @ vgs | 204 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 8825 pF @ 100 V |
The TO-247-4 package adds a Kelvin source pin that separates the gate-drive return from the high-current power path. This reduces common-source inductance in the gate loop, which translates to cleaner switching waveforms and lower turn-off losses in hard-switched topologies.
The STW88N65M5-4 uses a TO-247-4 package with a Kelvin source connection, while the standard STW88N65M5 uses a 3-lead TO-247. The fourth pin decouples the gate-drive return from the power current path, reducing gate-loop inductance for faster switching and lower losses. Die-level ratings are otherwise the same.