Skip to main content
STMicroelectronics STW75N60M6-4

STW75N60M6-4 MOSFET N-CH 600V 72A TO247-4

MPNSTW75N60M6-4
End of Life

STMicroelectronics MDmesh™ M6 series, N-Channel MOSFET, 600 V, 72 A, 36 mOhm, 106 nC gate charge, TO-247-4 through-hole package, -55 to 150 °C.

$13.19Ref. price · indicative, final on quote
PackagingTO-247-4
RoHSROHS3 Compliant
SeriesMDmesh™ M6
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW75N60M6-4 specifications
ParameterValue
SeriesMDmesh™ M6
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C72A (Tc)
Power dissipation446W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-4
Vgs(th) (Max) @ id4.75V @ 250µA
Rds on (Max) @ id, vgs36mOhm @ 36A, 10V
Gate charge (Qg) (Max) @ vgs106 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds4850 pF @ 100 V

Product details

Gate charge and the Kelvin-source advantage

STW75N60M6-4 total gate charge is 106 nC at 10 V. The TO-247-4 package adds a Kelvin-source pin that separates the power-source current path from the gate-drive return.

Frequently asked questions

What is the Rds(on) of STW75N60M6-4?

This is the spec to use for conduction-loss calculations at rated current.

What is the gate charge of STW75N60M6-4?

Total gate charge is 106 nC at a 10 V gate drive. This value, combined with the switching frequency, determines the gate-driver power requirement.