Gate charge and the Kelvin-source advantage
STW75N60M6-4 total gate charge is 106 nC at 10 V. The TO-247-4 package adds a Kelvin-source pin that separates the power-source current path from the gate-drive return.

STMicroelectronics MDmesh™ M6 series, N-Channel MOSFET, 600 V, 72 A, 36 mOhm, 106 nC gate charge, TO-247-4 through-hole package, -55 to 150 °C.
| Parameter | Value |
|---|---|
| Series | MDmesh™ M6 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 72A (Tc) |
| Power dissipation | 446W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-4 |
| Vgs(th) (Max) @ id | 4.75V @ 250µA |
| Rds on (Max) @ id, vgs | 36mOhm @ 36A, 10V |
| Gate charge (Qg) (Max) @ vgs | 106 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 4850 pF @ 100 V |
STW75N60M6-4 total gate charge is 106 nC at 10 V. The TO-247-4 package adds a Kelvin-source pin that separates the power-source current path from the gate-drive return.
This is the spec to use for conduction-loss calculations at rated current.
Total gate charge is 106 nC at a 10 V gate drive. This value, combined with the switching frequency, determines the gate-driver power requirement.