STW65N65DM2AG - STMicroelectronics
MPNSTW65N65DM2AG
End of Life
MOSFET N-CH 650V 60A TO247
$10.71Ref. price · indicative, final on quote
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesMDmesh™ DM2
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | MDmesh™ DM2 |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 650 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 60A (Tc) |
| Power dissipation | 446W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Qualification | AEC-Q101 |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 5V @ 250µA |
| Rds on (Max) @ id, vgs | 50mOhm @ 30A, 10V |
| Gate charge (Qg) (Max) @ vgs | 120 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 5500 pF @ 100 V |