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STMicroelectronics STW19NM50N

STW19NM50N MDmesh™ II N-Channel MOSFET, 500V 14A TO-247-3

MPNSTW19NM50N
End of Life

STMicroelectronics MDmesh™ II series, STW19NM50N, N-Channel MOSFET, 500V Vdss, 14A Id, 250mOhm Rds(on), 34nC Qg, TO-247-3 through-hole package.

$6.99Ref. price · indicative, final on quote
STMicroelectronics STW19NM50N datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesMDmesh™ II
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW19NM50N specifications
ParameterValue
SeriesMDmesh™ II
FET typeN-Channel
MountingThrough Hole
Drain to source voltage500 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C14A (Tc)
Power dissipation110W (Tc)
Operating temperature150°C (TJ)
PackageTube
Vgs±25V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4V @ 250µA
Rds on (Max) @ id, vgs250mOhm @ 7A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1000 pF @ 50 V

Product details

500 V N-channel MDmesh™ II MOSFET in TO-247-3

Gate charge totals 34 nC at 10 V, a figure that determines the driver's switching loss budget and the minimum drive current needed at the target frequency.

This is the value used for conduction loss calculation at full load; actual on-resistance rises with junction temperature, so the thermal design must account for the positive temperature coefficient typical of MDmesh™ II devices. Input capacitance is 1000 pF at 50 V drain-source, which together with the gate charge defines the driver's peak current requirement.

Housed in a TO-247-3 through-hole package, the STW19NM50N is designed for bolted mounting to a heatsink. The maximum power dissipation is 110 W at case temperature, making the thermal interface and heatsink selection the dominant factor in the junction temperature budget.

Frequently asked questions

What is the Rds(on) of STW19NM50N?

The maximum Rds(on) is 250 mOhm at a drain current of 7 A and a gate drive of 10 V.

Can STW19NM50N be used as a replacement for IRFP460?

Both are 500 V N-channel MOSFETs in TO-247 packages, but the STW19NM50N has a lower Rds(on) (250 mOhm vs 0.27 Ohm typical for IRFP460) and lower gate charge (34 nC vs ~120 nC). Verify the gate drive voltage, switching frequency, and thermal requirements in your specific circuit before substituting.