On-resistance and gate charge — the switching trade-off
Maximum on-resistance is 980 mOhm at 10 V gate drive and 4.6 A drain current. Gate charge is 115 nC at 10 V. Input capacitance is 3000 pF at 25 V Vds.

STMicroelectronics SuperMESH™, STW11NK90Z, N-Channel MOSFET, 900V Vdss, 9.2A Id, TO-247-3, Through Hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 900 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 9.2A (Tc) |
| Power dissipation | 200W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 100µA |
| Rds on (Max) @ id, vgs | 980mOhm @ 4.6A, 10V |
| Gate charge (Qg) (Max) @ vgs | 115 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 3000 pF @ 25 V |
Maximum on-resistance is 980 mOhm at 10 V gate drive and 4.6 A drain current. Gate charge is 115 nC at 10 V. Input capacitance is 3000 pF at 25 V Vds.
The STW11NK90Z is the specific order code in the SuperMESH™ series for a 900 V, 9.2 A N-channel MOSFET in TO-247-3. No official pin-compatible second-source alternate is listed in the available records. For dual-sourcing evaluation, compare parts with the same voltage class, current rating, and TO-247-3 footprint.