STW10NK60Z

STMicroelectronics · SuperMESH™ Series

STMicroelectronics SuperMESH™ series, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 750 mOhm Rds(on), TO-247-3 through-hole.

STMicroelectronics STW10NK60Z
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Technical specifications

STW10NK60Z specifications
Parameter / AttributeSpecification / Value
SeriesSuperMESH™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 25 V

Technical details

600 V, 10 A N-channel in TO-247-3

The STW10NK60Z is an N-channel MOSFET from STMicroelectronics' SuperMESH™ series, rated at 600 V drain-source and 10 A continuous drain at 25 °C case temperature.

STW10NK60Z
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