600 V, 10 A N-channel in TO-247-3
The STW10NK60Z is an N-channel MOSFET from STMicroelectronics' SuperMESH™ series, rated at 600 V drain-source and 10 A continuous drain at 25 °C case temperature.

STMicroelectronics SuperMESH™ series, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 750 mOhm Rds(on), TO-247-3 through-hole.
| Parameter | Value |
|---|---|
| Series | SuperMESH™ |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 10A (Tc) |
| Power dissipation | 156W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-247-3 |
| Vgs(th) (Max) @ id | 4.5V @ 250µA |
| Rds on (Max) @ id, vgs | 750mOhm @ 4.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 70 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 1370 pF @ 25 V |
The STW10NK60Z is an N-channel MOSFET from STMicroelectronics' SuperMESH™ series, rated at 600 V drain-source and 10 A continuous drain at 25 °C case temperature.
The STW10NK60Z is an active-production part sourced through independent distribution.
The Rds(on) is 750 mOhm maximum at 4.5 A drain current with a 10 V gate drive.