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STMicroelectronics STW10NK60Z

STW10NK60Z N-Channel 600 V 10 A MOSFET, TO-247-3

MPNSTW10NK60Z
End of Life

STMicroelectronics SuperMESH™ series, N-Channel MOSFET, 600 V drain-source, 10 A continuous drain, 750 mOhm Rds(on) at 10 V gate drive, 70 nC gate charge, TO-247-3 through-hole, -55 to 150 °C junction temperature.

$4.04Ref. price · indicative, final on quote
PackagingTO-247-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

STW10NK60Z Technical Specifications
ParameterValue
SeriesSuperMESH™
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage600 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation156W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id4.5V @ 250µA
Rds on (Max) @ id, vgs750mOhm @ 4.5A, 10V
Gate charge (Qg) (Max) @ vgs70 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds1370 pF @ 25 V

Product details

600 V, 10 A N-channel in TO-247-3 — the offline power switch

The STW10NK60Z is a 600 V, 10 A N-channel MOSFET in a TO-247-3 through-hole package.

On-resistance is 750 mOhm maximum at 4.5 A drain current and 10 V gate drive. Total gate charge is 70 nC at 10 V gate voltage.

Temperature range and thermal budget for industrial use

The junction temperature range is -55 °C to 150 °C.

There is no announced end-of-life or last-time-buy schedule, so the part can be qualified into a production BOM without near-term obsolescence risk.

Frequently asked questions

What is the Rds(on) of the STW10NK60Z?

This is the figure to use for worst-case conduction loss calculations at the operating current.