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STMicroelectronics STW10N95K5

STW10N95K5 N-Channel MOSFET, 950 V, 8 A, TO-247-3

MPNSTW10N95K5
End of Life

STMicroelectronics SuperMESH5™ STW10N95K5, N-Channel MOSFET, 950 V Vdss, 8 A continuous drain, 800 mOhm Rds(on) at 10 V, 22 nC gate charge, TO-247-3 through-hole, -55 to 150 °C junction.

$4.32Ref. price · indicative, final on quote
STMicroelectronics STW10N95K5 datasheet (PDF)
PackagingTO-247-3
RoHSROHS3 Compliant
SeriesSuperMESH5™
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

STW10N95K5 specifications
ParameterValue
SeriesSuperMESH5™
FET typeN-Channel
MountingThrough Hole
Drain to source voltage950 V
Drive voltage (Max rds on, min rds on)10V
Current - continuous drain (Id) @ 25°C8A (Tc)
Power dissipation130W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTube
Vgs±30V
TechnologyMOSFET (Metal Oxide)
CaseTO-247-3
Vgs(th) (Max) @ id5V @ 100µA
Rds on (Max) @ id, vgs800mOhm @ 4A, 10V
Gate charge (Qg) (Max) @ vgs22 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds630 pF @ 100 V

Product details

The STW10N95K5 is a 950 V, 8 A N-channel MOSFET from ST's SuperMESH5™ series, housed in a TO-247-3 through-hole package. The 950 V drain-source rating gives 50 % headroom above a 600 VDC bus, enough to ride through 800 V surge events without avalanche stress.

Switching losses and gate drive budget

Gate charge is 22 nC at 10 V drive. Input capacitance is 630 pF at 100 V drain-source. Rds(on) is 800 mOhm maximum at 4 A, 10 V. At 25 °C junction that is 3.2 W conduction loss at 4 A — the TO-247 copper tab can sink that with a modest clip-on heatsink. Above 100 °C junction the on-resistance roughly doubles, so budget the thermal path for 6–7 W at full load.

Frequently asked questions

What is the Rds(on) of STW10N95K5?

Maximum on-resistance is 800 mOhm at 4 A drain current with 10 V gate drive. This is the worst-case figure at 25 °C junction; expect the typical value to be lower, and the actual resistance to increase with temperature.