STMicroelectronics MDmesh™ II, STU7NM60N, N-Channel MOSFET, 600V Vdss, 5A Id, 900mOhm Rds(on) at 10V, 14nC Qg, TO-251-3 (IPAK) through-hole, 150°C TJ, Active.
| Parameter | Value |
|---|---|
| Series | MDmesh™ II |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 600 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 5A (Tc) |
| Power dissipation | 45W (Tc) |
| Operating temperature | 150°C (TJ) |
| Package | Tube |
| Vgs | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 4V @ 250µA |
| Rds on (Max) @ id, vgs | 900mOhm @ 2.5A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 363 pF @ 50 V |
The TO-251 (IPAK) is a through-hole package with three leads. It takes standard soldering iron work. The tab is the drain.
No end-of-life notice or last-time-buy schedule has been announced. For new designs, the MDmesh™ II series is a mature, stable platform with no imminent obsolescence risk.
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