STMicroelectronics SuperMESH5™ STU7N80K5, N-Channel MOSFET, 800V Vdss, 6A Id, 1.2 Ohm Rds(on) at 10V, 13.4 nC Qg, TO-251 (IPAK) through-hole, -55°C to 150°C.
| Parameter | Value |
|---|---|
| Series | SuperMESH5™ |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 800 V |
| Drive voltage (Max rds on, min rds on) | 10V |
| Current - continuous drain (Id) @ 25°C | 6A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tube |
| Vgs | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Vgs(th) (Max) @ id | 5V @ 100µA |
| Rds on (Max) @ id, vgs | 1.2Ohm @ 3A, 10V |
| Gate charge (Qg) (Max) @ vgs | 13.4 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 360 pF @ 100 V |
The STU7N80K5: Total gate charge is 13.4 nC at 10 V, with an input capacitance of 360 pF at 100 V drain-source.
Housed in a TO-251 (IPAK) through-hole package with short leads, the STU7N80K5 dissipates up to 110 W at the case.
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